Abstract
The effects of intensive interlevel transitions in quantum wells (QWs) and strong spin-orbit interactions on weak localization are considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type QWs based on A3B5 semiconductors. It is shown that the sign of magnetoresistance changes with varying of the doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
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