Abstract
The quadrupole 209Bi spin–spin and spin–lattice relaxation were studied within 4.2–300 K for pure and doped Bi4Ge3O12 single crystals which exhibit, as was previously found, anomalous magnetic properties. The results revealed an unexpectedly strong influence of minor amounts of paramagnetic dopants (0.015–0.5 mol.%) on the relaxation processes. Various mechanisms (quadrupole, crystal electric field, electron spin fluctuations) govern the spin–lattice relaxation time T 1 in pure and doped samples. Unlike T 1, the spin–spin relaxation time T 2 for pure and Nd-doped samples was weakly dependent on temperature within 4.2–300 K. Doping Bi4Ge3O12 with paramagnetic atoms strongly elongated T 2. The elongation, although not so strong, was also observed for pure and doped crystals under the influence of weak (∼30 Oe) external magnetic fields. To confirm the conclusion about strong influence of crystal field effects on the temperature dependence of T 1 in the temperature range 4.2–77 K, the magnetization vs. temperature and magnetic field was measured for Nd- and Gd-doped Bi4Ge3O12 crystals using a SQUID magnetometer. The temperature behavior of magnetic susceptibility for the Nd-doped crystal was consistent with the presence of the crystal electric field effects. For the Gd-doped crystal, the Brillouin formula perfectly fitted the curve of magnetization vs. magnetic field, which pointed to the absence of the crystal electric field contribution into the spin–lattice relaxation process in this sample.
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