Abstract
In Mn-doped InSb single crystals an unusual, for nonmagnetic semiconductors, dependence on manganese concentration have been revealed for magnetization, conductivity, magnetoresistance and the Hall effect in the range NMn= (1÷2)×1017cm-3. Noticeable low temperature magnetization increase was observed at NMn≈1×1017cm-3. Strong correlation between magnetization, specific resistivity, Colossal Magnetoresistance (CMR) and the Hall constant as a function of manganese concentration in InSb(Mn) was revealed on the insulating side of the metal-insulator transition at Ncr=2×1017cm-3 and at temperature below 10K. Simultaneously, an onset of ferromagnetic-like response in the magnetic moment measurements of p-InSb(Mn) at NMn≤Ncr= 2×1017 cm-3 was registered. This experimental evidence fits the pattern of triplet excitons switching off from conductivity and demonstrates weak magnetic ordering. The coincidence in transport, magnetotransport properties of p-InSb(Mn) and uniaxially stressed p-InSb(Ge) crystals puts forward the idea that the unusual InSb(Mn) properties could be related to Jahn-Teller distortions caused by Mn.
Highlights
Manganese influence on magnetotransport and magnetic properties of InSb and other AIIIBV semiconductors has attracted close attention due to the intensive study of Diluted Magnetic Semiconductors (DMS), like In1-xMnxSb and Ga1-xMnxAs, as potential materials in spintronics.[1,2,3,4] For these magnetic semiconductors with high Mn concentration (x=0,1-10%) the effect of resistivity decrease in magnetic field, namely, Negative Magnetoresistance (NM) can play the key role in innovative electronic device construction
We have shown that non-magnetic manganese doped InSb crystals demonstrated NM at relatively small manganese concentrations (NMn=1÷ 2×1017cm-3) on the insulating side of the metal-insulator transition (MIT at Ncr=2×1017cm-3).[5,6,7]
It was revealed that nonmagnetic InSb (Mn) crystals at NMn≈ 1×1017cm-3 demonstrated significant 4 orders of magnitude resistivity decrease at temperature ∼1K and magnetic field 1T, which was comparable to the effect of Colossal Negative Magnetoresistance (CMR) in Manganite Perovskite Pr0,7Ca0,3Mn03.8 It should be stressed that Diluted Magnetic Semiconductor In0,98Mn0,02Sb demonstrated a NM effect which did not exceed 20% at T∼1,5K and B∼1T.9
Summary
Manganese influence on magnetotransport and magnetic properties of InSb and other AIIIBV semiconductors has attracted close attention due to the intensive study of Diluted Magnetic Semiconductors (DMS), like In1-xMnxSb and Ga1-xMnxAs, as potential materials in spintronics.[1,2,3,4] For these magnetic semiconductors with high Mn concentration (x=0,1-10%) the effect of resistivity decrease in magnetic field, namely, Negative Magnetoresistance (NM) can play the key role in innovative electronic device construction. Anomalous magnetic and transport properties of InSb(Mn) crystals near metal-insulator transition
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