Abstract
After the furnace annealing of heavily boron-doped Si film below 650 °C, the electronic properties and relating crystallinity of the Si film were evaluated. The sheet resistance obtained using four-point probe decreases as a result of solid phase crystallization (SPC) at 650 °C for 1 h. With efficient solidified activation, the sheet resistance for the Si film of 50 nm thickness with implantation at a B+ dose of 5 ×1015 cm-2 decreased below 900 Ω/□. By extending annealing time for more than 1 h, resistance increased anomalously. The increase in resistance is mainly due to boron redistribution in the Si film and at the Si/SiO2 interface and to boron deactivation as well, as determined from the secondary ion mass spectrometry (SIMS) profile, which is related to a decrease in carrier concentration.
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