Abstract
As sizes of semiconductor devices are reduced, quantum mechanical properties of electrons play an important role. For small heterojunction diodes including a potential barrier, the influence of transmission resonance on current–voltage characteristics is discussed. The diodes have been prepared using a GaAs–AlxGa1−xAs system by MBE. A preliminary result shows the anomalous I–V curve which is presumed to be due to transmission resonance.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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