Abstract
Very high photocurrents are observed at hydrogen‐evolving p‐type Si electrodes having high electric resistivities. Under illumination with a solar simulator (AM 1, 100 mW cm−2), their photocurrent density reached 80 mA cm−2, more than twice that of normal p‐Si electrodes. The photocurrent density depended on the surface treatment of the p‐Si wafer, the kinds of metals used for the back contact, and the method of applying the metals. Solid‐state photocells made of Si wafers having high electric resistivities also showed very high photocurrents. In both cases, it has been revealed that the anomalous high photocurrents are caused by the electron injection from the metals, which form the back contacts to the Si wafers, into the conduction band of p‐Si.
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