Abstract
Metallic samples of Be and Si pair $\ensuremath{\delta}$-doped GaAs structures which undergo a metal-insulator transition with a decrease in the hole concentration are investigated by Hall resistance and magnetoresistance measurements. The anomalous Hall effect and negative magnetoresistance are observed from the samples in a temperature range above $70\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. Magnitudes of negative magnetoresistance and anomalous Hall resistance significantly vary among the samples, although their doping conditions are close to one another. Dependence of anomalous Hall resistance on the temperature and applied magnetic field is closely correlated to that of negative magnetoresistance for each sample. Their dependence is explained on the basis of a paramagnetic state of localized magnetic moments coexisting with itinerant holes in these samples. Both anomalous Hall effect and negative magnetoresistance decrease with lowering the temperature from $150\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and vanish at a temperature around $70\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, a possible origin of which is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
