Abstract
We employ a helicity-basis kinetic equation approach to investigate the anomalous Hall effect in two-dimensional narrow-band semiconductors considering both Rashba and extrinsic spin-orbit (SO) couplings, as well as a SO coupling directly induced by an external driving electric field. Taking account of long-range electron-impurity scattering up to the second Born approximation, we find that the various components of the anomalous Hall current fit into two classes: (a) side-jump and (b) skew scattering anomalous Hall currents. The side-jump anomalous Hall current involves contributions not only from the extrinsic SO coupling but also from the SO coupling due to the driving electric field. It also contains a component which arises from the Rashba SO coupling and relates to the off-diagonal elements of the helicity-basis distribution function. The skew scattering anomalous Hall effect arises from the anisotropy of the diagonal elements of the distribution function and it is a result of both the Rashba and extrinsic SO interactions. Further, we perform a numerical calculation to study the anomalous Hall effect in a typical $\mathrm{InSb}∕\mathrm{AlInSb}$ quantum well. The dependencies of the side-jump and skew scattering anomalous Hall conductivities on magnetization and on the Rashba SO coupling constant are examined.
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