Abstract
Temperature dependences of low field Hall resistivity ρH are used to separate anomalous (ρHa) and normal (RHB) contributions to the Hall effect in chiral magnet MnSi (Tc ≈ 29.1 K). It is found that the transition between paramagnetic (T > Tc) and magnetically ordered (T Tc). The crossover between the intrinsic (∼ρ2) and extrinsic (∼ρ) contributions to the anomalous Hall effect develops together with the noticeable increase in the concentration of charge carriers estimated from the normal Hall coefficient (from n/nMn(T > Tc) ≈ 0.94 to n/nMn(T < Tc) ≈ 1.5, nMn ≈ 4.2 × 1022 cm−3). The observed features may correspond to the dramatic change in Fermi surface topology induced by the onset of long-range magnetic order in MnSi.
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