Abstract
The purpose of our work was to study the anomalous Hall effect in narrow gap ferromagnetic semiconductors. We investigated transport and magnetic properties of IV–VI compounds: Sn 1− x Mn x Te, Sn 1− x− y Mn x Er y Te and Sn 1− x− y Mn x Eu y Te in high magnetic fields using the very same samples. The simultaneous analysis of the total Hall coefficient and magnetization measurements data enabled us to determine the anomalous Hall coefficient R S value and its temperature behavior.
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