Abstract
Topological contribution to the anomalous Hall effect in IV-VI narrow-gap semiconductors with a nonzero spontaneous magnetization due to magnetic impurities is considered theoretically. The off-diagonal conductivity is calculated in the relativistic model of the IV-VI semiconductors. Spin-orbit interaction in these compounds is strong and cannot be treated perturbatively. Therefore, it is included in the Hamiltonian of a clean (defect-free) system. Geometrical interpretation of the topological contribution to the Hall conductivity is also briefly discussed.
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