Anomalous Hall effect in Cr doped FeSi

Abstract

Investigations of economically affordable bulk materials for the spin based electronics are in huge demand. In this direction, electrical and Hall transport properties of the polycrystalline Cr doped Kondo insulator FeSi, i.e Fe0.975Cr0.025Si is reported. Well agreement between temperature dependence of the Hall and linear resistivity are observed. The observed minimum at ~19K in the resistivity is attributed to the ferromagnetic transition temperature (TC). Anomalous Hall resistivity is seen in the itinerant ferromagnet, Fe0.975Cr0.025Si well below the TC. The obtained Hall resistivity is comparable with that of the spintronic material Fe0.9Co0.1Si. The present study proves that the electrical transport properties of bulk materials made by low cost elements such as Fe, Cr and Si exhibits large magnetic field effects and are useful for the spintronics applications, unlike spintronics material (Ga, Mn)As that demand higher costs.