Abstract
The anomalous Hall and Nernst effects are considered theoretically for the model Hamiltonian describing properties of electronic states formed at the interfaces of semiconductor heterostructures or perovskite oxide junctions and surfaces. Using the Matsubara Green's function formalism and linear response theory we find, among others, substantial intrinsic contributions to both effects. Additionally, a change of sign in the anomalous Nernst conductivity occurs for temperatures preceding the magnetic phase transition.
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