Abstract
AlN thin films were grown on Al2O3 (0001) by MBE using NH3-clusters ionized with the energy of 4–7eV/molecule at 960°C. The a-axis is shrunken and the c-axis is extremely elongated at the initial growth stage (up to the film thickness of about 20nm). The films thicker than 20nm have the relaxed a- and c-axis lengths close to the unstrained values, which obey the Poisson relation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
