Abstract
AbstractThe quality of P‐N heterojunction is crucial for the performance of antimony selenide (Sb2Se3) solar cells and thus attracting urgent attention. In this work, the monovalent cation Ag+ is doped in CdS, which enhances the N‐type conductivity of CdS film anomalously and reduces its parasitic absorption simultaneously. Furthermore, Ag doping of CdS promotes the diffusion of Cd into the Sb2Se3 layer, forming CdSb defects, which enhances the P‐type conductivity of Sb2Se3 and reduces the density of deep‐level centers. With further chemical etching treatment on the CdS surface, the quality of the CdS/Sb2Se3 P‐N heterojunction is distinctly improved, making the energy band alignment of CdS/Sb2Se3 more favorable for carrier transportation. Finally, a remarkable efficiency of 8.14%, which is the highest efficiency among those with Jsc of 30.96 mA cm−2, is achieved for vapor transport deposition processed Sb2Se3 solar cells. This work provides a strategy to simultaneously optimize the CdS and Sb2Se3 functional layers and enhance the quality of P‐N heterojunction for efficient Sb2Se3 solar cells.
Published Version
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