Abstract
Metal/dielectric interface properties of Au/SrTiO3 (STO) and SrRuO3/SrTiO3 (SRO/STO) interfaces were investigated using metal/STO/heavily Nb-doped STO (0.5 wt % Nb:STO) capacitors. The observed interfacial capacitance at SRO/STO accords with results predicted theoretically, whereas that at the Au/STO interface is strongly suppressed, suggesting an intrinsic low-k (dielectric constant) interfacial layer formation at the Au/STO interface owing to in situ evaporated Au after STO film deposition. Furthermore, metal/0.01 wt % Nb:STO junctions were also analyzed. It was found that the SRO/Nb:STO junction forms an ideal Schottky dipole, whereas the Au/Nb:STO junction exhibits anomalous electrical properties.
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