Abstract
A qualitative difference between high-voltage gallium-arsenide diodes and similar silicon devices is found experimentally upon ultrafast switching in the delayed avalanche breakdown regime. It is shown that, following switching, a gallium-arsenide diode remains in a highly conductive state throughout the entire duration of the applied voltage pulse and the recovery of the reverse voltage across the p-n junction due to the dispersal of nonequilibrium electron-hole plasma is not observed. In the same interval of time (2 ns in our experiment), a silicon diode passes completely into a blocking state. The residual voltage amplitude for a gallium-arsenide diode is an order of magnitude lower than that for a silicon device. The discovered effect is similar to a known effect of “sticking” of gallium-arsenide diode switches (the lock-on effect), which are triggered by a laser pulse, in a conductive state.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
