Abstract

Resistance and magnetoresistance in compressively strained epitaxial \({\text{Pr}}_{{\text{2/3}}} {\text{Sr}}_{{\text{1/3}}} {\text{MnO}}_{\text{3}}\) ultrathin films have been studied. The samples were first demagnetized in different ways so that different magnetic structures were created, such as random domain and single domain states. Very large difference in resistance in zero applied magnetic field was observed between different states. The large change of resistance between states is attributed to spin-dependent scattering at the domain walls. We have shown for the first time that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be explained by the double-exchange model.

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