Abstract
Linearly polarized photoluminescence (PL) measurements were carried out on InP-GaP lateral nanowires grown using a lateral composition modulation method in pulsed magnetic fields up to ∼ 50 T. In these structures, the energy band alignment becomes type-I and type-II in In-rich wire and Ga-rich barrier regions, respectively. It is revealed that the polarization of the type-I PL is oriented along the [11̄0] crystal direction, whereas that of the type-II PL is along the [110] direction in the absence of magnetic field. These two different PL peaks exhibit anomalous energy shifts with respect to the direction of the magnetic field due to the variation of the confined energy in the exciton center of mass potential.
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