Abstract
We report on a depth profile study of 6Li and noble gases implanted into the AZ111 photoresist. The measured profiles of 6Li confirm previous data for light ions (B and F) showing that above a threshold implantation energy part of the implanted ions redistribute according to the TRIM calculated ionization profile. The noble gases Ar, Kr and Xe have shown noticeable diffusion after room temperature implantation. Two regimes of diffusional behaviour were observed corresponding to the damaged and non-damaged regions of the polymer. The diffusion in the damaged region strongly depends on fluence showing a behaviour similar to that of resistivity in ion irradiated polymers.
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