Abstract
This review article focuses on the basics of thin films and the construction of thin film heterojunction diode. The article clarifies various models explaining heterojunction diode's electrical conduction mechanisms. The electrical parameters such as rectification ratio (RR), ideality factor (n), saturation current (IS), barrier height (ϕb), built-in potential (vbi) and carrier concentration (N) are discussed. The conduction mechanism of the diode at lower bias and higher bias discourses in detail. The impedance spectroscopy used to analyze a diode is also pronounced.
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