Abstract
Carrier transport in semiconductor photoelectrodes strongly correlates with intrinsic material characteristics including carrier mobility and diffusion length, and extrinsic structural imperfections including mobile charged defects at domain boundaries, which collectively determines the photoelectrochemistry (PEC) performance. Here we elucidate the interplay between intrinsic carrier transport, domain-boundary-induced conductivity, and PEC water oxidation in the model photoanode of bismuth vanadate (BiVO4). In particular, epitaxial single-domain BiVO4 and c-axis-oriented multidomain BiVO4 thin films are fabricated using pulsed laser deposition to decouple the intrinsic and extrinsic carrier transport. In addition to the low intrinsic conductivity that is due to the small-polaron transport within BiVO4 domains, we identify anomalously high electrical conductivity arising from vertical domain boundaries for multidomain BiVO4 films. Local domain-boundary conduction compensates the inherently poor electron tr...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
