Abstract

Hydrogenated diamond-like carbon (DLC) films are sought for several technological applications including electronics, optics, mechanics, and tribology. However, conventional hydrogenated DLC films, that commonly deposit at low base pressure (~10−5 to 10−8 Torr), have many intrinsic limitations in terms of moderate hardness (15–25 GPa), low electrical conductivity (in insulating regime), and they display amorphous morphology. Here we develop high-performance hydrogenated carbon-based films using a cost-effective and fast deposition approach. We report the room temperature synthesis of nitrogen incorporated nanostructured hydrogenated carbon films (n-C:N:H) at a high base pressure of ~5 × 10−3 Torr, employing a non-conventional radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) system equipped with only a primary pump. The n-C:N:H films show appealing properties such as wide band gap (2.35–2.9 eV), high optical transparency, high hardness (up to ~ 40 GPa), ultrahigh elasticity (elastic recovery ~95%), reasonably good electrical conductivity, and diode-like behavior when examined in n-C:N:H/Si heterojunction device configuration. Interestingly, some of n-C:N:H films revealed the multifunctional activities with properties surpassing to those of many low base pressure grown traditional amorphous DLC films. This discovery solves many fundamental concerns of hydrogenated DLC films and opens new paths for their enhanced commercial applications.

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