Abstract
One of the optical response of charge carriers in bilayer graphene, anomalous Rabi oscillation is investigated theoretically in presence of mechanical strain. Rabi oscillation in extreme non-resonance regime is known as anomalous Rabi oscillation, has been predicted theoretically in single layer graphene by new technique known as asymptotic rotating wave approximation. In this article, we have shown a strong dependence of anomalous Rabi oscillations of charge carriers on the mechanical strain near the vanishing point of conduction and valance band.
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