Abstract
Measurements are reported of the switching lifetimes of the discrete resistance fluctuations in AuAl 20 3Au tunnel junctions which have small Al particles randomly embedded within the insulating barrier. The tunnel junctions are 50×50 Pin 2 and the Al particles are nominally disk-shaped with thickness about 30Å and radius 500Å. Tunnel M-I-M junctions which do not contain embedded metal particles typically have switching lifetimes that decrease exponentially with applied d.c. bias voltage. However, we have found that the presence of embedded particles leads to anomalous behavior, in which the switching lifetimes increase with applied bias voltage. We ascribe this behavior to the interaction of defects with the charge state of the embedded Al particles.
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