Abstract
Anomalous temperature dependences of photoluminescence (PL) linewidth were found in In x Ga 1− x As/GaAs strained-layer quantum wells (QW's). The PL linewidth exhibited two different types of anomalous behavior depending on the well width L z and the indium composition x. With increasing temperature, (i) QW's with L z exceeding the critical layer thickness exhibited a linear increase followed by an abrupt decrease of the linewidth, whereas (ii) QW's with x ⩾ 0.144 and L z = 50−70 A ̊ showed linewidth narrowing. We explain these phenomena as due to (i) competition between free excitonic and dislocation-related emissions and (ii) exciton localization due to alloy disorder, respectively. By taking account of these anomalous behaviors, the dependence of the PL linewidth on L z was satisfactorily explained in terms of alloy disorder.
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