Abstract
An anodic oxide film of InP, which had an interface state density of ? 1011 cm?2 eV?1 near midgap and worked well as the gate insulator for InP MOSFETs, was obtained by optimising its preparation conditions. The excellence of the anodic oxide as a gate insulator was confirmed by a high electron effective mobility (1500 cm2/Vs) in the accumulation-mode InP MOSFETs.
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