Anodic Oxidation Technique using an Atomic Force Microscope to Fabricate a Single-Electron Device for a Radiation Imaging Detector

Abstract

We have employed an anodic oxidation technique using an atomic force microscope to fabricate a single-electron transistor (SET) as the nanoscale thermometer for the new real-time radiation imaging detector with nanometer spatial resolution proposed for isotope ratio mass spectroscopy. We have estimated the precision of the anodic oxidation technique in making an oxide on a thin Ti film deposited on a SiO2 substrate, and determined the conditions for forming the oxides. It is found that the size of the oxide can be controlled in the nanometer scale from 100 to 240 nm with the precision of 15 nm for the oxide width and a positional precision of 23 nm under the relative humidity of 60%.