Abstract
Abstract Tantalum silicides TaSi x of various compositions ( x = 0.2–1.2) were anodized in 0.1 M KNO 3 -ethylene glycol, 0.05 M (NH 4 )SO 4 -ethylene glycol and HF-H 2 O solutions. The kinetics of the anodization process is determined by the oxide formation and its simultaneous local dissolution. The anodic oxide formed exhibits a two-layer or uniform composition depending on the relative contents of tantalum and silicon atoms in the silicide film. Various types of defects related to the local oxide dissolution and mechanical stress accumulation are observed during the anodic oxide growth.
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