Abstract
It is shown that thin native oxide films can be grown by anodization of in pure water. An interfacial phosphorus‐rich condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, we can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field.
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