Abstract
The anodic oxidation of gallium phosphide in properly pH‐adjusted NMA solutions was carried out under constant current conditions. Uniform oxides have been reproducibly grown in NMA with 10% . The pH was adjusted to 12 using and readjusted to 8.5–10 using citric acid. The oxide thickness‐forming voltage relationship is linear, with a slope of approximately 11 Å · V−1, independent of current density from 0.125–4.0 mA · cm−2. The thickness of consumed during the oxide growth voltage relationship is also linear, but its slope varies with current density (, mA · cm−2) and is described empirically as . Electrical carrier‐concentration and mobility profiles in Zn‐implanted were obtained by differential Hall‐effect and sheet‐resistivity measurements combined with an oxide growth‐stripping process, where anodization is performed under optimumly defined conditions.
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