Abstract
A technique is described that combines controlled anodic oxidation with differential Hall data to obtain electrical carrier concentration profiles of ion‐implanted indium phosphide. Reproducible oxide layers are grown using a citric acid, ethylene glycol electrolyte bath and a controlled voltage rise technique. A variation in material consumption with anodic oxide thickness and with anodizing technique is observed. For the purposes of demonstration, silicon and sulfur species implanted at 1 MeV to fluences of are examined. These profiles are measured on <100> implanted semi‐insulating. The technique could be adapted to measure other alloys in the system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
