Anodic etching of n-type GaN films in NaOH electrolyte with Cl ions

Abstract

Anodic etching of GaN films grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire substrate using a sodium hydroxide (NaOH) electrolyte was reported. It was found that the addition of chloride ions in the NaOH electrolyte accelerated the rate of anodic etching of GaN films. The effect of adding chloride ions in the electrolyte is to reduce the amount of gallium hydroxide formed on the GaN surface. The presence of chloride ions in the NaOH electrolyte plays an important role in the anodic etching of n-GaN films.