Abstract
Anodic etching of GaN films grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire substrate using a sodium hydroxide (NaOH) electrolyte was reported. It was found that the addition of chloride ions in the NaOH electrolyte accelerated the rate of anodic etching of GaN films. The effect of adding chloride ions in the electrolyte is to reduce the amount of gallium hydroxide formed on the GaN surface. The presence of chloride ions in the NaOH electrolyte plays an important role in the anodic etching of n-GaN films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
