Abstract
Joinability of silicon carbide to glass by anodic bonding was evaluated. Polycrystalline silicon carbide was successfully bonded to borosilicate glass Corning 7740. No crack by the residual stress occurred in all bonding conditions adopted in the present study. Increase in the bonding temperature enhanced progress of bonding, and the joint strength increased with the bonding temperature and the voltage application time. But the shear fracture stress of the joints did not exceed 6 MPa, and all the joints broken at the joint interface. Formation of a carbon-rich amorphous layer at the bond interface was observed by transmission electron microscopy. It was suggested that this layer caused relatively low joint strength of silicon carbide/glass anodically-bonded joint.
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