Abstract
Porous silicon (PS) antireflection coatings have been obtained by stain etching of crystalline Si in HF:HNO 3:H 2O solutions at different etching times and HNO 3 concentrations. The morphology of the PS samples was characterised by anodic oxidation and revealed the increase of the porous surface area with the HNO 3 concentration. Upon a certain critical concentration of HNO 3, the surface of crystalline Si immersed in the solution becomes polished, and a decrease of its surface area is observed. The samples were also characterised by a spectrophotometer in the range 300–900 nm, showing an effective reflectance below 4% in most of the spectral range for samples obtained in an etching solution, where the HNO 3 is below its critical concentration. Anodic oxidation after etching can be used as an useful tool for the qualitative and quantitative analysis of porous surface areas.
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