Abstract
It has been known that the new donor ND whose deep-level transient spectroscopy (DLTS) peak appears at about 33 K can be generated in two-step heat treated (723 and 923 K) carbon-rich n-type CZ silicon. In this study, the annihilation process of the new donor ND1 is studied by a combination of electrical measurement, DLTS and Fourier transform infrared spectroscopy (FTIR). The results show that the ND1 is annihilated by annealing at temperatures above 1073 K. The size of the ND1 cluster is not the same, but distributes in a certain range. The ND1 loses its electrical activity by both decomposition and growth of the ND1 cluster during the annealing. Annealing at a temperature between 1073 and 1273 K would delay the ND1 annihilation by decomposition and enhance that by growth in the subsequent annealing at a higher temperature.
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