Abstract
Annealing time and temperature dependence for thermal- and photo-induced crystallization in amorphous GeSe 2 was studied by Raman measurement. Amorphous GeSe 2 crystallizes to a low temperature form, LT-GeSe 2 or a high temperature form, HT-GeSe 2. We investigated the growth conditions of crystallization with and without laser irradiation for LT-GeSe 2 and HT-GeSe 2 from the relation of a time–temperature–transformation (T–T–T) diagram. The activation energy for thermal crystallization from amorphous GeSe 2 to LT-GeSe 2 is about 4.6 eV, whereas that for photo-induced crystallization is about 2.6 eV.
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