Abstract
AbstractIt has been suggested that the experimentally observed orientation dependence of the mobility of grain boundaries in f.c.c. metals may be related to the dependence of the rate of self diffusion in grain boundaries on the disorientation across the boundary. Later, this relative orientation effect on the rate of boundary diffusion and self diffusion was experimentally observed. It was shown by Hoffman and Turnbull that in bicrystals of silver misoricnted around (100) by 9° to 28°, self diffusion along the boundary (parallel to the common (100)) may be described in terms of a coefficient of self diffusion in individual grain boundary edge dislocation pipes, orders of magnitude larger than the coefficient of lattice self diffusion. It is significant that the coefficient of self diffusion in grain boundary dislocation pipes was found to be independent of the misorientation (i.e., of the density of edge dislocations in the boundary) at least up to 28°, suggesting that even a boundary of such a great misorientation may be considered as a network of dislocations, as far as self diffusion is concerned.In recent experiments the relative mobilities of boundaries in various orientations between a deformed (99.98% pure) aluminum single crystal and recrystallized grains growing in it in fairly well defined, lattice orientation relationships were compared. The matrix crystal was rolled to 80% R.A. on a (110) plane in a [112] direction, after which the strip still retained its initial orientation and the texture was very sharp. Recrystallized grains quite accurately oriented so as to have highest overall boundary mobility, i.e., corresponding to 40° rotations around the two 111 axes of the matrix grain lying in the rolling plane, were produced in large numbers by random nucleation on one side of the strip (rubbing one side with sandpaper and annealing). The re crystallized grains, that were at first growing in very large numbers and quite randomly but only in the thin surface layer highly deformed by abrasion (nucleation side), on annealing for 600 sec at 350°C grew across the whole thickness (0,010″) of the rolled single crystal. As a result of very selective growth, the recrystallized grains reaching the other side of the strip (growth side) showed a very sharp texture consisting of four components with the orientations described.
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