Abstract
AbstractAnnealing temperature‐dependent (ATD) microstructure, ferroelectric, dielectric, and piezoelectric properties of Bi3.15Nd0.85Ti3O12 (BNT) thin films by metal‐organic decomposition method were investigated in detail. The relative permittivity εr (702) at 1 kHz, the spontaneous polarization 2Ps (72 µC/cm2), and the effective piezoelectric coefficient d33 (62 pm/V) under the amplitudes of the bipolar driving field 320 and 280 kV/cm are the best for BNT thin film annealed at 700 °C. The 2Ps and εr moderated by annealing temperature are responsible for ATD piezoelectric properties according to phenomenologic equation. The results show BNT is a promising candidate for piezoelectric thin film devices.
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