Abstract
We have investigated the effects of post deposition annealing (PDA) on chemical structures of 4nm-LaOx, 4nm-ScOx/Si, 2nm-LaOx/2nm-ScOx/Si and 2nm-ScOx/2nm-LaOx/Si interfaces by angle-resolved X-ray photoemission spectroscopy. Analyses of Si 2s spectra show that the reactivity between ScOx and Si substrate is lower than that between LaOx and Si substrate. Analyses of O 1s spectra show that the absorption of moisture in the LaOx is suppressed by 2nm-ScOx/2nm-LaOx/Si structure. In addition, the electronic band structure of ScOx/Si(100) was decided.
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