Annealing studies of silicon microstrip detectors irradiated at high neutron fluences

Abstract

Silicon p-type detectors are being investigated for the development of radiation-tolerant detectors for the luminosity upgrade of the CERN large hadron collider (Super-LHC (sLHC)). Microstrip detectors have been fabricated by CNM-IMB with an n-side read-out on p-type high-resistivity float zone substrates. They have been irradiated with neutrons at the TRIGA Mark II nuclear reactor in Ljubljana. The irradiation fluxes match with the expected doses for the inner tracker at the sLHC (up to 10 16 equivalent 1 MeV neutrons cm −2). The macroscopic properties of the irradiated prototypes after irradiation were characterized at the IFIC-Valencia laboratory. The charge collection studies were carried out by means of a radioactive source setup as well as by an infrared laser illumination. The annealing behavior was studied in detail on a microstrip detector irradiated with a flux of 10 15 equivalent 1 MeV neutrons cm −2. Collected charge measurements were made after accelerated annealing times at 80 °C up to an equivalent annealing time of several years at room temperature. This note reports on the recorded results from the annealing of the irradiated p-type microstrip sensor.