Abstract
Ion implantation of dopant impurities into semiconductors offers numerous potential advantages. However, because of the limited knowledge presently available on the annealing of lattice damage, the implantation profile and the electrical characteristics of implanted layers, a considerable amount of investigation is required before this doping technique can be put to practical use. Experimentally obtained implantation profiles and electrical conductivity characteristics of high energy (above 1 Mev) dopant ion implants into silicon are presented. Some preliminary results of ion implantation on silicon dioxide and on the resulting devices are also included.
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