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Abstract
An extension of the online implantation chamber used for emission Mössbauer Spectroscopy (eMS) at ISOLDE/CERN that allows for quick removal of samples for offline low temperature studies is briefly described. We demonstrate how online eMS data obtained during implantation at temperatures between 300 K and 650 K of short-lived parent isotopes combined with rapid cooling and offline eMS measurements during the decay of the parent isotope can give detailed information on the binding properties of the Mössbauer probe in the lattice. This approach has been applied to study the properties of Sn impurities in ZnO following implantation of 119In (T½ = 2.4 min). Sn in the 4+ and 2+ charge states is observed. Above T > 600 K, Sn2+ is observed and is ascribed to Sn on regular Zn sites, while Sn2+ detected at T < 600 K is due to Sn in local amorphous regions. A new annealing stage is reported at T ≈ 550 K, characterized by changes in the Sn4+ emission profile, and is attributed to the annihilation of close Frenkel pairs.
Highlights
An understanding of implantation-induced effects in host materials and their annealing behavior is essential to unravel the physics of damage recovery and open up the possibility of tailoring the electrical, magnetic, and optical properties of materials with appropriate tuning of the doping and annealing.1Over the years, ion implantation has proved to be a key processing step in material modification
An extension of the online implantation chamber used for emission Mössbauer Spectroscopy at ISOLDE/CERN that allows for quick removal of samples for offline low temperature studies is briefly described
In the case of 119In-implanted ZnO, three annealing stages could be identified by analyzing the Debye temperatures
Summary
An understanding of implantation-induced effects in host materials and their annealing behavior is essential to unravel the physics of damage recovery and open up the possibility of tailoring the electrical, magnetic, and optical properties of materials with appropriate tuning of the doping and annealing.1Over the years, ion implantation has proved to be a key processing step in material modification. The combined use of implanted shortlived radioactive isotopes and the sensitivity of emission Mössbauer Spectroscopy (eMS) to minor changes in the nuclear energy levels presents a unique method that is twofold: (i) material modification by introducing the desired dopants to enhance material properties and (ii) characterization at an atomic level using emitted byproducts from the decay chain. This provides information on lattice sites of incorporated desired daughter dopants in a crystal, its site changes with materials thermal annealing, and the complexes that the probe ions form
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