Abstract
We investigate the electrical properties of polycrystalline silicon thin films implanted with arsenic or boron ions. Two types of post-implantation annealing have been performed on the samples: a conventional thermal annealing (CTA) and a rapid thermal annealing (RTA). We find that RTA improves the electrical properties. Measurements of gauge factors have been carried out on both films. We conclude that RTA can be applied successfully in thin film silicon integrated sensor technology
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