Abstract
ZnO films were grown by atmospheric metal–organic chemical vapour deposition and annealed at900 °C in an oxygen environment. The annealing properties of the films have been characterized bymeans of x-ray diffraction, Raman scattering, Rutherford backscattering (RBS), elastic recoildetection analysis (ERDA) and photoluminescence spectra. The results indicate that highcrystal quality ZnO film has been obtained after annealing. The full width at half-maximum ofω rocking curves is only 369 arcsec. The Raman spectra show a strong high frequencyE2 mode peak comparable to that for bulk ZnO. The intensity ratio of theE1(LO) peakto E2high peak before annealing is 0.81 and after annealing 0.75. RBS and ERDA spectra indicatethat a stoichiometric ZnO film is formed and the annealing only changes the H content inthe ZnO film. After annealing all emission lines become sharper, as expected, which meansa higher quality film has been obtained.
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