Abstract
Semi-insulating GaAs grown by the vertical zone melting (VZM) method has a low density of etch pits (about (1–4)×10 3 cm -2), but a low concentration of EL2 (about 7×10 15 cm -3). We find that annealing VZM GaAs by either a two-step or by a one-step process increases mobility and raises the EL2 concentration to 14×10 15 cm -3, while the etch pit density remains low. The annealing works equally well whether applied as a post-growth process or as an in-situ procedure done during cool-down from the crystal growth temperature. In the in-situ process, cooling the crystal to about 600°C before reheating is essential for the increases in mobility and EL2 to occur.
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