Abstract
AbstractHigh temperature electrical conductivity (HTEC) as a function of time after step‐like change of Zn vapor pressure (PZn) at fixed ZnO crystal temperature (TZnO) and after step‐like change of TZnO at fixed PZn was measured in undoped ZnO single crystal and in undoped ZnO ceramic sample. It was found a difference on HTEC relaxation curves in these measurements. Samples were cooled from temperature 1273 K to room temperature. Appearance of asymmetric spectrum with g≈1.96 and disappearance of Mn2+ spectrum were detected in EPR investigations. Then vacuum annealing was applied for these samples and intensity of g≈1.96 EPR spectrum was registered after every vacuum annealing cycles. The change in sample color, the change in g≈1.96 spectrum intensity as well as appearance again of Mn2+ EPR spectrum in the course of vacuum annealing was explained by the model of defect clusters formed during cooling of the crystal. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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