Abstract
A boron-implanted marker and secondary ion mass spectroscopy analysis were used for diamond etching assessment. Trace amounts of oxygen in argon etch polycrystalline diamond films during annealing at 800 °C. The deposition of a protective PECVD hydrogenated amorphous silicon nitride layer prevents such etching during annealing at least up to 1300 °C. The hydrogen losses of Si 3 N 4 during heating, from 10% after growth to 0.5% at 1000 °C, do not reduce the diffusion barrier efficiency. This is attributed to Si-N bond reconstruction during H effusion. The influence of high temperature annealing on the diamond film was studied by IR transmission spectroscopy and X-ray microanalysis. No carbon compound was found on the diamond surface after annealing and Si 3 N 4 removal. However, a large amount of silicon carbide was observed after annealing above 1100 °C at the interface between the diamond film and the silicon substrate.
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