Abstract
The successive annealing of CaF 2 adlayers deposited at low temperature (400°C) on vicinal Si(111) has been studied in situ by ultra high vacuum atomic force microscopy (UHV-AFM). Monoatomic islands on top of closed CaF 2 layers observed for the as-deposited adlayers vanish during the first annealing steps (<600°C). In addition notches of monoatomic height are formed at the previous straight adlayer steps of the CaF 2 terraces. They have triangular shape in agreement with the non-polar {111} facets of the B-orientated CaF 2 adlayer. For higher annealing temperatures the CaF 2 is partly dissociated so that Ca clusters are formed on top of the adlayer steps. This extraordinary nucleation site is attributed to the partial lateral relaxation of the CaF 2 adlayer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
